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Dual facet passivation of silver halometallate for eco-friendly silver bismuth sulfide near IR photodetector
  • Sharma, Ashish ;
  • Kim, Hanjae ;
  • Kim, Gunhee ;
  • Kang, Jinhyeon ;
  • Lee, Cheong Beom ;
  • Bae, Sung Yong ;
  • Song, Hochan ;
  • Kim, Kyeounghak ;
  • Kim, Jong Hyun ;
  • Jung, In Hwan ;
  • Kang, Dong Won ;
  • Lee, Jihoon ;
  • Choi, Hyosung
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Publication Year
2023-10-01
Publisher
Elsevier B.V.
Citation
Chemical Engineering Journal, Vol.473
Keyword
Dual facet passivationEcofriendlyNIR photodetectorsSilver bismuth sulfide nanocrystal
Mesh Keyword
DetectivityDual facet passivationEco-friendlyLigand exchangesNear infrared photodetectorsNear infrared regionNear IR photodetectorPerformanceSilver bismuth sulphide nanocrystalTernary chalcogenides
All Science Classification Codes (ASJC)
Chemistry (all)Environmental ChemistryChemical Engineering (all)Industrial and Manufacturing Engineering
Abstract
Ternary chalcogenide silver bismuth sulfide nanocrystals (AgBiS2 NCs) have taken great strides in the past few years to emerge as one of the better eco-friendly alternatives to compete with the prevalent toxic semiconductor materials such as lead sulfide quantum dots (PbS QDs) in the near-infrared (NIR) region. Nevertheless, their implementation in photodetectors has been scarce due to high dark current and complicated solid-state ligand exchange fabrication steps involved, resulting in a lower overall detectivity. The performance is further deemed to be stunted due to the difficulty associated with the passivation of the charge-neutral (1 0 0) facet of larger AgBiS2 NCs efficiently. In this work, we aimed to develop a mixed ‘halometallate’ ligand approach, wherein we introduce silver bromide (AgBr) as an ancillary ligand to silver iodide (AgI), passivating both (1 0 0) and (1 1 1) facets of cubic AgBiS2 solids in a facile solution-phase ligand exchange step to obtain highly dispersible colloidal ink. Decreased bond length, bond angle (Br-Ag-Br), and ionic size of [AgBr2-] anion induces less compressive strain compared to [AgI2–], culminating in higher molecular stability on the AgBiS2 surface. This dual passivation reduces the dark current to 6.01 × 10-7 A cm−2 and a high specific detectivity of 1.8 × 1012 Jones at 800 nm is achieved, comparable to ubiquitous PbS QD devices. We also demonstrate diminished in-gap carrier density population, enhanced light detection, and ultrafast microsecond response at higher wavelengths operating under high bias (-1V) photoconductive mode. This study illustrates the role of optimum surface coverage in eliminating the deleterious non-radiative recombination defect centers by introducing additional ligands in solution-processed AgBiS2 NC and the viability of the mixed ligand approach for stable eco-friendly NIR photodetectors.
ISSN
1385-8947
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/33580
DOI
https://doi.org/10.1016/j.cej.2023.145246
Fulltext

Type
Article
Funding
This research was supported by Nano\u00b7Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT, Korea ( NRF-2021M3H4A1A02049634 ). This work was supported by the National Research Foundation of Korea ( 2022M3H4A1A03076093 , NRF-2022R1A6A3A01086821 ).
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Kim, Jong Hyun김종현
Department of Applied Chemistry & Biological Engineering
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