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Thru-Hole Epitaxy: A Highway for Controllable and Transferable Epitaxial Growthoa mark
  • Jang, Dongsoo ;
  • Ahn, Chulwoo ;
  • Lee, Youngjun ;
  • Lee, Seungjun ;
  • Lee, Hyunkyu ;
  • Kim, Donghoi ;
  • Kim, Yongsun ;
  • Park, Ji Yong ;
  • Kwon, Young Kyun ;
  • Choi, Jaewu ;
  • Kim, Chinkyo
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dc.contributor.authorJang, Dongsoo-
dc.contributor.authorAhn, Chulwoo-
dc.contributor.authorLee, Youngjun-
dc.contributor.authorLee, Seungjun-
dc.contributor.authorLee, Hyunkyu-
dc.contributor.authorKim, Donghoi-
dc.contributor.authorKim, Yongsun-
dc.contributor.authorPark, Ji Yong-
dc.contributor.authorKwon, Young Kyun-
dc.contributor.authorChoi, Jaewu-
dc.contributor.authorKim, Chinkyo-
dc.date.issued2023-02-03-
dc.identifier.issn2196-7350-
dc.identifier.urihttps://dspace.ajou.ac.kr/dev/handle/2018.oak/33105-
dc.description.abstractControllable growth and facile transferability of a crystalline film with desired characteristics, acquired by tuning composition and crystallographic orientation, become highly demanded for advanced flexible devices. Here the desired crystallographic orientations and facile transferability of a crystalline film can be achieved by “thru-hole epitaxy” in a straightforward and undemanding manner with no limitation on the layer number and polarity of a 2D space layer and the surface characteristics. The crystallographic alignment can be established by the connectedness of the grown material to the substrate through a small net cross-sectional area of thru-holes, which also allows the straightforward detachment of the grown material. Thru-hole epitaxy can be adopted for the realization of advanced flexible devices on large scale with desired crystallographic orientation and facile transferability.-
dc.description.sponsorshipD.J., C.A., and Y.L. contributed equally to this work. The authors gratefully acknowledge financial support from the Korean government (MSIT, MOE) through the National Research Foundation (NRF) of Korea (NRF‐2019R1A2C1005417, NRF‐2019R1F1A1063643, NRF‐2020R1F1A1050725, NRF‐2020R1A5A6017701, NRF‐2021R1A5A1032996, NRF‐2022R1A2C1005505 and BK21 FOUR Program) and through Korea Basic Science Institute (National research Facilities and Equipment Center) grant (2021R1A6C101A437) funded by the Ministry of Education. Some portion of the computational work was done using the resources of the KISTI Supercomputing Center (KSC‐2022‐CRE‐0062).-
dc.description.sponsorshipD.J., C.A., and Y.L. contributed equally to this work. The authors gratefully acknowledge financial support from the Korean government (MSIT, MOE) through the National Research Foundation (NRF) of Korea (NRF-2019R1A2C1005417, NRF-2019R1F1A1063643, NRF-2020R1F1A1050725, NRF-2020R1A5A6017701, NRF-2021R1A5A1032996, NRF-2022R1A2C1005505 and BK21 FOUR Program) and through Korea Basic Science Institute (National research Facilities and Equipment Center) grant (2021R1A6C101A437) funded by the Ministry of Education. Some portion of the computational work was done using the resources of the KISTI Supercomputing Center (KSC-2022-CRE-0062).-
dc.language.isoeng-
dc.publisherJohn Wiley and Sons Inc-
dc.subject.meshControllable growth-
dc.subject.meshCrystalline films-
dc.subject.meshCrystallographic alignment-
dc.subject.meshCrystallographic orientations-
dc.subject.meshDensity-functional-theory-
dc.subject.meshFlexible device-
dc.subject.meshHexagonal boron nitride-
dc.subject.meshLayer number-
dc.subject.meshThru-hole epitaxy-
dc.subject.meshTransferability-
dc.titleThru-Hole Epitaxy: A Highway for Controllable and Transferable Epitaxial Growth-
dc.typeArticle-
dc.citation.titleAdvanced Materials Interfaces-
dc.citation.volume10-
dc.identifier.bibliographicCitationAdvanced Materials Interfaces, Vol.10-
dc.identifier.doi10.1002/admi.202201406-
dc.identifier.scopusid2-s2.0-85143443356-
dc.subject.keywordcrystallographic alignment-
dc.subject.keyworddensity functional theory-
dc.subject.keywordgallium nitride-
dc.subject.keywordhexagonal boron nitride-
dc.subject.keywordthru-hole epitaxy-
dc.subject.keywordtransferability-
dc.description.isoatrue-
dc.subject.subareaMechanics of Materials-
dc.subject.subareaMechanical Engineering-
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