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Recent Advances in the Low-Temperature Chemical Vapor Deposition Growth of Grapheneoa mark
  • Josline, Mukkath Joseph ;
  • Kim, Eui Tae ;
  • Lee, Jae Hyun
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Publication Year
2022-05-01
Publisher
Korean Vacuum Society
Citation
Applied Science and Convergence Technology, Vol.31, pp.63-70
Keyword
Chemical vapor depositionElectronicGrapheneLow-temperature growthOptoelectronic applications
All Science Classification Codes (ASJC)
Materials Science (miscellaneous)Condensed Matter PhysicsPhysical and Theoretical ChemistryElectrical and Electronic Engineering
Abstract
Since the realization of the prospect of synthesizing graphene via mechanical exfoliation, graphene has garnered considerable attention owing to its remarkable chemical, electrical, material, and various other properties, which makes it an ideal contender for electronic and optoelectronic applications. Many top-down and bottom-up strategies have been researched to fabricate graphene films, notably chemical vapor deposition (CVD), which has been proven to deliver large-area, high-quality graphene films with the additional advantage of being economical. However, graphene production utilizing gaseous predecessors, such as methane, typically requires high temperatures, which increases the production cost due to the high thermal budget. Recently, the prospect of employing low-temperature conditions for graphene growth has been explored, using various hydrocarbon precursors and alternative energy sources. This review discusses the low-temperature CVD growth of graphene and recent improvements in this area with a brief introduction to applications based on these graphene specimens.
ISSN
2288-6559
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/32753
DOI
https://doi.org/10.5757/asct.2022.31.3.63
Fulltext

Type
Article
Funding
This research was supported by the National Research Foundation (NRF) of Korea (NRF-2020R1A4A4079397 and NRF-2021R1A2C2012649). J. H. Lee acknowledges the Ajou University Research Fund.
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