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Solution-processed metal oxide dielectric films: Progress and outlookoa mark
  • Lee, Won June ;
  • Kwak, Taehyun ;
  • Choi, Jun Gyu ;
  • Park, Sungjun ;
  • Yoon, Myung Han
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9

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Publication Year
2021-12-01
Publisher
American Institute of Physics Inc.
Citation
APL Materials, Vol.9
Mesh Keyword
Dielectrics propertyExternal fieldsHigh qualityMetal oxide dielectricsPhysico-chemicalsProcess qualityResponse behaviourSol-gel approachSolution-processedTailored properties
All Science Classification Codes (ASJC)
Materials Science (all)Engineering (all)
Abstract
There has been growing interest in the use of the sol-gel approach to form high-quality dielectric materials. Their tailored properties allow for developing functional electronic devices in a scalable and rapid manner. According to physicochemical principles, the displacement and response behavior of charges under an applied external field can manifest in unique dielectric properties, providing useful information to improve the process, design, and quality of electronic devices. Therefore, a systematic and in-depth investigation of the fundamentals of sol-gel dielectrics is necessary. In this Research Update, we present recent advances in various sol-gel-processed dielectric materials and their applications to functional electronic devices. A brief introduction to sol-gel chemistry to form oxide dielectric films and the basis of physical mechanisms under electrical fields are discussed. Along with the dielectric properties, recent achievements of proof-of-concept experiments and their various applications to functional electronic devices are introduced. It is expected that further innovations in solution-processed metal oxide dielectrics will achieve cost-effective high-performance functional electronics in the near future.
ISSN
2166-532X
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/32430
DOI
https://doi.org/10.1063/5.0066014
Fulltext

Type
Article
Funding
This research was supported by the Korea Electric Power Corporation (Grant No. R21XO01-20) and research grants from the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT, Korea (Grant Nos. NRF-2018M3A7B4070988, NRF-2020R1F1A1073564, NRF-2021R1A4A1033155, NRF-2020M3D1A1030660, NRF-2021R1A2C1013015 and NRF-2020M1A2A2080748). This work was also supported by the GIST Research Institute (GRI) grant funded by GIST in 2021.
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Park, Sungjun 박성준
Department of Electrical and Computer Engineering
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