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A crash recovery scheme for a hybrid mapping FTL in nand flash storage devicesoa mark
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dc.contributor.authorPark, Jong Hyeok-
dc.contributor.authorPark, Dong Joo-
dc.contributor.authorChung, Tae Sun-
dc.contributor.authorLee, Sang Won-
dc.date.issued2021-02-01-
dc.identifier.issn2079-9292-
dc.identifier.urihttps://dspace.ajou.ac.kr/dev/handle/2018.oak/31816-
dc.description.abstractAn FTL (flash translation layer), which most flash storage devices are equipped with, needs to guarantee the consistency of modified metadata from a sudden power failure. This crash recovery scheme significantly affects the writing performance of a flash storage device during its normal operation, as well as its reliability and recovery performance; therefore, it is desirable to make the crash recovery scheme efficient. Despite the practical importance of a crash recovery scheme in an FTL, few works exist that deal with the crash recovery issue in FTL in a comprehensive manner. This study proposed a novel crash recovery scheme called FastCheck for a hybrid mapping FTL called Fully Associative Sector Translation (FAST). FastCheck can efficiently secure the newly generated address-mapping information using periodic checkpoints, and at the same time, leverages the characteristics of an FAST FTL, where the log blocks in a log area are used in a round-robin way. Thus, it provides two major advantages over the existing FTL recovery schemes: one is having a low logging overhead during normal operations in the FTL and the other to have a fast recovery time in an environment where the log provisioning rate is relatively high, e.g., over 20%, and the flash memory capacity is very large, e.g., 32 GB or 64 GB.-
dc.description.sponsorshipThis work was supported by the Institute Information Communications Technology Planning Evaluation (IITP) (no. Conference 2015-0-00314); in part by the Support MSIT (Ministry for Programming of Science, ICT), Korea, under the High-Potential Individuals Global Training Program)(2020-0-01592), supervised by the IITP (Institute for Information & Communications Technology Planning & Evaluation); in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2019R1F1A1058548).-
dc.language.isoeng-
dc.publisherMDPI AG-
dc.titleA crash recovery scheme for a hybrid mapping FTL in nand flash storage devices-
dc.typeArticle-
dc.citation.endPage20-
dc.citation.startPage1-
dc.citation.titleElectronics (Switzerland)-
dc.citation.volume10-
dc.identifier.bibliographicCitationElectronics (Switzerland), Vol.10, pp.1-20-
dc.identifier.doi10.3390/electronics10030327-
dc.identifier.scopusid2-s2.0-85100196486-
dc.identifier.urlhttps://www.mdpi.com/2079-9292/10/3/327-
dc.subject.keywordAddress mapping-
dc.subject.keywordCrash recovery-
dc.subject.keywordLogging-
dc.subject.keywordNAND flash memory-
dc.description.isoatrue-
dc.subject.subareaControl and Systems Engineering-
dc.subject.subareaSignal Processing-
dc.subject.subareaHardware and Architecture-
dc.subject.subareaComputer Networks and Communications-
dc.subject.subareaElectrical and Electronic Engineering-
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