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Power-up control techniques for reliable SRAM PUFoa mark
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dc.contributor.authorLee, Juyun-
dc.contributor.authorJee, Dong Woo-
dc.contributor.authorJeon, Dongsuk-
dc.date.issued2019-01-01-
dc.identifier.issn1349-2543-
dc.identifier.urihttps://dspace.ajou.ac.kr/dev/handle/2018.oak/30890-
dc.description.abstractPhysically unclonable function (PUF) is a widely used hardware- level identification method. SRAM PUFs are the most well-known PUF topology, but they typically suffer from low reproducibility due to non-deterministic behaviors and noise during power-up process. In this work, we propose two power-up control techniques that effectively improve reproducibility of the SRAM PUFs. The techniques reduce undesirable bit flipping during evaluation by controlling either evaluation region or power supply ramp-up speed. Measurement results from the 180nm test chip confirm that native unstable bits (NUBs) are reduced by 54.87% and bit error rate (BER) decreases by 55.05% while reproducibility increases by 2.2×.-
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea under Grants NRF-2019R1C1C1004927 and NRF-2016R1C1B2016072, and by the Information Technology Research Center Support Program Supervised by the Institute for Information and Communications Technology Promotion under Grants IITP-2019-2018-0-01421. This work was also supported by the Technology Innovation Program (10074267, Development of the Miniaturized Sensor Module Technology for 3D Finger Vein Recognition using Ultrasound based on 500dpi Class High Resolution) funded by the MOTIE, Korea.-
dc.language.isoeng-
dc.publisherInstitute of Electronics Information Communication Engineers-
dc.subject.meshBit flipping-
dc.subject.meshControl techniques-
dc.subject.meshDeterministic behavior-
dc.subject.meshIdentification method-
dc.subject.meshPhysically unclonable functions-
dc.subject.meshPower supply-
dc.subject.meshReproducibilities-
dc.subject.meshTest chips-
dc.titlePower-up control techniques for reliable SRAM PUF-
dc.typeArticle-
dc.citation.titleIEICE Electronics Express-
dc.citation.volume16-
dc.identifier.bibliographicCitationIEICE Electronics Express, Vol.16-
dc.identifier.doi10.1587/elex.16.20190296-
dc.identifier.scopusid2-s2.0-85071392669-
dc.identifier.urlhttps://www.jstage.jst.go.jp/article/elex/16/13/16_16.20190296/_pdf-
dc.subject.keywordPhysically unclonable function-
dc.subject.keywordPower-up control-
dc.subject.keywordSRAM-
dc.description.isoatrue-
dc.subject.subareaElectronic, Optical and Magnetic Materials-
dc.subject.subareaCondensed Matter Physics-
dc.subject.subareaElectrical and Electronic Engineering-
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