ZnO, a cost-effective metal-oxide semiconductor, has received many attentions for sensing and optoelectronic applications. To improve its properties for developing practical applications, our study on investigating effects of H-doping with UV photochemistry on ZnO thin films, especially electrical property, was presented with the use of a thin film transistor (TFT) platform. Here, ZnO thin films, used as the active channel, were deposited by radio frequency plasma sputtering at room temperature. For an investigation of structural effect, post-deposition annealing (PDA) was carried out before UV irradiation used to introduce H species. By combining these two processes, a significant improvement of the electrical property of ZnO based TFTs, due to the crystallization enhancement along with an increase of doping level, was observed and discussed in detail. Overall, our approach was simple but effective to tune properties of oxide semiconductors.
This work was supported by the Nano-Material Technology Development Program ( NRF-2014M3A7B4049368 ), the Basic Science Program ( NRF-2018R1D1A1B07050008 and NRF-2019R1A2C2003804 ), and Korea Research Fellowship program ( 2018H1D3A1A02074733 ) through the National Research Foundation (NRF) funded by the Ministry of Science and ICT . This was also supported by Ajou University .This work was supported by the Nano-Material Technology Development Program (NRF-2014M3A7B4049368), the Basic Science Program (NRF-2018R1D1A1B07050008 and NRF-2019R1A2C2003804), and Korea Research Fellowship program (2018H1D3A1A02074733) through the National Research Foundation (NRF) funded by the Ministry of Science and ICT. This was also supported by Ajou University.
