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Mechanical exfoliation and electrical characterization of a one-dimensional Nb2Se9 atomic crystaloa mark
  • Kim, Bum Jun ;
  • Jeong, Byung Joo ;
  • Oh, Seungbae ;
  • Chae, Sudong ;
  • Choi, Kyung Hwan ;
  • Nasir, Tuqeer ;
  • Lee, Sang Hoon ;
  • Kim, Kwan Woo ;
  • Lim, Hyung Kyu ;
  • Choi, Ik Jun ;
  • Chi, Linlin ;
  • Hyun, Sang Hwa ;
  • Yu, Hak Ki ;
  • Lee, Jae Hyun ;
  • Choi, Jae Young
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Publication Year
2018-01-01
Publisher
Royal Society of Chemistry
Citation
RSC Advances, Vol.8, pp.37724-37728
Mesh Keyword
Electrical characterizationMechanical exfoliationNanoelectronic devicesP type semiconductorScanning Kelvin probe microscopyTwo-dimensional layered structuresVan Der Waals interactionsVapor-transport reaction
All Science Classification Codes (ASJC)
Chemistry (all)Chemical Engineering (all)
Abstract
A novel semiconductor 1D nanomaterial, Nb2Se9, was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb2Se9 contains numerous single Nb2Se9 chains linked by van der Waals interactions, and we confirmed that a bundle of chains can be easily separated by mechanical cleavage. The exfoliated Nb2Se9 flakes exhibit a quasi-two-dimensional layered structure, and the number of layers can be controlled using the repeated-peeling method. The work function varied depending on the thickness of the Nb2Se9 flakes as determined by scanning Kelvin probe microscopy. Moreover, we first implemented a field effect transistor (FET) based on nanoscale Nb2Se9 flakes and verified that it has p-type semiconductor characteristics. This novel 1D material can form a new family of 2D materials and is expected to play important roles in future nano-electronic devices.
ISSN
2046-2069
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/30475
DOI
https://doi.org/10.1039/c8ra07437b
Fulltext

Type
Article
Funding
This work was supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program, 10063400, Development of Growth and Transfer Technology for Defectless 350 \u2a2f 350 mm2 Single Crystalline Graphene) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). J. H. Lee acknowledges support from the Presidential Postdoctoral Fellowship Program of the NRF in Korea (2014R1A6A3A04058169).
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Yu, Hak Ki류학기
Department of Materials Science Engineering
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