Citation Export
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seok, Tae Jun | - |
dc.contributor.author | Liu, Yuhang | - |
dc.contributor.author | Jung, Hae Jun | - |
dc.contributor.author | Kim, Soo Bin | - |
dc.contributor.author | Kim, Dae Hyun | - |
dc.contributor.author | Kim, Sung Min | - |
dc.contributor.author | Jang, Jae Hyuck | - |
dc.contributor.author | Cho, Deok Yong | - |
dc.contributor.author | Lee, Sang Woon | - |
dc.contributor.author | Park, Tae Joo | - |
dc.date.issued | 2018-01-01 | - |
dc.identifier.uri | https://dspace.ajou.ac.kr/dev/handle/2018.oak/30380 | - |
dc.description.abstract | We report the field-effect transistors using quasi-two-dimensional electron gas generated at an ultrathin (∼10 nm) Al2O3/TiO2 heterostructure interface grown via atomic layer deposition (ALD) on a SiO2/Si substrate without using a single crystal substrate. The 2DEG at the Al2O3/TiO2 interface originates from oxygen vacancies generated at the surface of the TiO2 bottom layer during ALD of the Al2O3 overlayer. High-density electrons (∼1014 cm-2) are confined within a ∼2.2 nm distance from the Al2O3/TiO2 interface, resulting in a high on-current of ∼12 μA/μm. The ultrathin TiO2 bottom layer is easy to fully deplete, allowing an extremely low off-current, a high on/off current ratio over 108, and a low subthreshold swing of ∼100 mV/decade. Via the implementation of ALD, a mature thin-film process can facilitate mass production as well as three-dimensional integration of the devices. | - |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, & Future Planning (grant no. 2015R1A5A1037548). This research was also supported by the Basic Science Research Program through the NRF funded by the Ministry of Education (grant nos. 2018R1D1A1B07046071 and 2018R1D1A1B07043427) and by the Korea Basic Science Institute (grant no. T38603). | - |
dc.language.iso | eng | - |
dc.publisher | American Chemical Society | - |
dc.subject.mesh | Atomic layer deposited | - |
dc.subject.mesh | Field-effect devices | - |
dc.subject.mesh | Heterostructure interfaces | - |
dc.subject.mesh | ON/OFF current ratio | - |
dc.subject.mesh | Quasi-two-dimensional electron gas | - |
dc.subject.mesh | Single crystal substrates | - |
dc.subject.mesh | Subthreshold swing | - |
dc.subject.mesh | Three dimensional integration | - |
dc.title | Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al2O3/TiO2 Ultrathin (<10 nm) Film Heterostructures | - |
dc.type | Article | - |
dc.citation.endPage | 10409 | - |
dc.citation.startPage | 10403 | - |
dc.citation.title | ACS Nano | - |
dc.citation.volume | 12 | - |
dc.identifier.bibliographicCitation | ACS Nano, Vol.12, pp.10403-10409 | - |
dc.identifier.doi | 10.1021/acsnano.8b05891 | - |
dc.identifier.pmid | 30204410 | - |
dc.identifier.scopusid | 2-s2.0-85053693498 | - |
dc.identifier.url | http://pubs.acs.org/journal/ancac3 | - |
dc.subject.keyword | aluminum oxide | - |
dc.subject.keyword | atomic layer deposition | - |
dc.subject.keyword | field-effect transistor | - |
dc.subject.keyword | titanium oxide | - |
dc.subject.keyword | two-dimensional electron gas | - |
dc.description.isoa | false | - |
dc.subject.subarea | Materials Science (all) | - |
dc.subject.subarea | Engineering (all) | - |
dc.subject.subarea | Physics and Astronomy (all) | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.