One of the I-V-VI semiconductors, Silver antimony sulfide (AgSbS2) has the various advantages for photovoltaic device. It has bulk direct band gap of about 1.7 eV which is suitable range for solar cell, and high absorption coefficient. However, the research of AgSbS2 has been limited to thin films by microwave irradiation, successive ionic layer adsorption and reaction (SILAR) method. AgSbS2 has not been synthesized in QDs by colloidal method. We report for the first time synthesis of AgSbS2 QDs by colloidal method. It can control QDs size by surfactant ratio. TEM and XRD show that particle sizes were controlled from 6.5 nm to 18 nm. Additionally, AgSbS2 QDs is characterized by various techniques including absorption, XPS, CV. We fabricated n-p hetero-junction photovoltaic cell using AgSbS2 QD as absorber material. The AgSbS2 QDs device show Jsc of 6.9 mA/cm2, Voc of 0.45 V, fill factor 37 %, and an overall power conversion efficiency (η) of 1.15 % under AM 1.5 illumination.
