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Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors- Lee, Yujin;
- Nam, Taewook;
- Seo, Seunggi;
- Yoon, Hwi;
- Oh, Il Kwon;
- Lee, Chong Hwon;
- Yoo, Hyukjoon;
- Kim, Hyun Jae;
- Choi, Wonjun;
- Im, Seongil;
et al
- 2021-05-05
- ACS Applied Materials and Interfaces, Vol.13 No.17, pp.20349-20360
- American Chemical Society
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