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Showing results 1 to 7 of 7
A Fast Settling, 0.1-100% Duty-cycled, 1-100 mA Accurate Current Control LED Driver for PPG Sensor System
Lim, Sung Won;
Jee, Dong Woo
2024-08-01
Journal of Semiconductor Technology and Science, Vol.24 No.4, pp.289-295
Institute of Electronics Engineers of Korea
Analysis and Prediction of Nanowire TFET’s Work Function Variation
Hwang, Tae Hyun;
Kim, Sangwan;
Kim, Garam;
Kim, Hyunwoo;
Kim, Jang Hyun
2024-04-01
Journal of Semiconductor Technology and Science, Vol.24 No.2, pp.96-104
Institute of Electronics Engineers of Korea
Direct growth of graphene on a SiGe alloy surface by chemical vapor deposition
Moon, Ji Yun;
Kim, Seung Il;
Heo, Keun;
Lee, Jae Hyun
2019-04-01
Journal of Semiconductor Technology and Science, Vol.19 No.2, pp.190-195
Institute of Electronics Engineers of Korea
Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations
Ko, Min Ki;
Kim, Jang Hyun
;
Kim, Garam
2023-08-01
Journal of Semiconductor Technology and Science, Vol.23 No.4, pp.228-235
Institute of Electronics Engineers of Korea
Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction
Yun, Chaewon;
Kim, Sangwan;
Cho, Seongjae;
Cho, Il Hwan;
Kim, Hyunwoo;
Kim, Jang Hyun
;
Kim, Garam
2023-08-01
Journal of Semiconductor Technology and Science, Vol.23 No.4, pp.207-214
Institute of Electronics Engineers of Korea
Optimization of FinFET’s Fin Width and Height with Self-heating Effect
Lee, Gyeong Jae;
Kwon, Yoon Jun;
Song, Young Suh;
Kim, Hyunwoo;
Kim, Jang Hyun
2024-08-01
Journal of Semiconductor Technology and Science, Vol.24 No.4, pp.365-372
Institute of Electronics Engineers of Korea
Work-Function Variation and Delay Analysis in NAND and NOR Circuits using Gate Insulator Stack-based Dopingless Tunnel Field-effect Transistors
Lee, Jongmin
;
Kim, Jang Hyun
2024-12-01
Journal of Semiconductor Technology and Science, Vol.24 No.6, pp.557-564
Institute of Electronics Engineers of Korea
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