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MIT characteristic of VO2 thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H2O reactant- Shin, Changhee;
- Lee, Namgue;
- Choi, Hyeongsu;
- Park, Hyunwoo;
- Jung, Chanwon;
- Song, Seokhwi;
- Yuk, Hyunwoo;
- Kim, Youngjoon;
- Kim, Jong Woo;
- Kim, Keunsik;
et al
- 2019-10-01
- Journal of Ceramic Processing Research, Vol.20 No.5, pp.484-489
- Hanyang University
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