Showing results 1 to 2 of 2
First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory with Low Reset Current Density (-3 MA/cm2) and Low Resistance Drift (-0.002 at 105°C)- Intisar Khan, Asir;
- Perez, Christopher;
- Wu, Xiangjin;
- Won, Byoungjun;
- Kim, Kangsik;
- Kwon, Heungdong;
- Ramesh, Pranav;
- Neilson, Kathryn M.;
- Asheghi, Mehdi;
- Saraswat, Krishna;
et al
- 2022-01-01
- Digest of Technical Papers - Symposium on VLSI Technology, Vol.2022-June, pp.310-311
- Institute of Electrical and Electronics Engineers Inc.
Unveiling the Effect of Superlattice Interfaces and Intermixing on Phase Change Memory Performance- Khan, Asir Intisar;
- Wu, Xiangjin;
- Perez, Christopher;
- Won, Byoungjun;
- Kim, Kangsik;
- Ramesh, Pranav;
- Kwon, Heungdong;
- Tung, Maryann C.;
- Lee, Zonghoon;
- Oh, Il Kwon;
et al
- 2022-08-10
- Nano Letters, Vol.22 No.15, pp.6285-6291
- American Chemical Society
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