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Showing results 1 to 6 of 6

A comparative study of charge trapping effect in p-type MoTe2 and WSe2 FETs using pulsed current-voltage measurements
  • Yang, Jeong Yong;
  • Lee, Chan Ho;
  • Oh, Young Taek;
  • Ma, Jiyeon;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2021-01-01
  • Japanese Journal of Applied Physics, Vol.60 No.1
  • IOP Publishing Ltd
Design of p-WSe2/n-Ge Heterojunctions for High-Speed Broadband Photodetectors
  • Lee, Chan Ho;
  • Park, Youngseo;
  • Youn, Sukhyeong;
  • Yeom, Min Jae;
  • Kum, Hyun S.;
  • Chang, Jiwon;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2022-01-01
  • Advanced Functional Materials, Vol.32 No.4
  • John Wiley and Sons Inc
Graded crystalline HfO gate dielectric layer for high-k/Ge MOS gate stackoa mark
  • 2021-01-01
  • IEEE Journal of the Electron Devices Society, Vol.9, pp.295-299
  • Institute of Electrical and Electronics Engineers Inc.
Low subthreshold slope AlGaN/GaN MOS-HEMT with spike-annealed HfO2 gate dielectricoa mark
  • Yeom, Min Jae;
  • Yang, Jeong Yong;
  • Lee, Chan Ho;
  • Heo, Junseok;
  • Chung, Roy Byung Kyu;
  • Yoo, Geonwook
  • 2021-12-01
  • Micromachines, Vol.12 No.12
  • MDPI
Vertically Stacked vdW Double Heterojunction Photodiode with Ultrawide Bandgap Gallium Oxide Electron Reservoir
  • 2022-10-01
  • Advanced Optical Materials, Vol.10 No.19
  • John Wiley and Sons Inc
Visible and infrared dual-band imaging via Ge/MoS2van der Waals heterostructureoa mark
  • Hwang, Aujin;
  • Park, Minseong;
  • Park, Youngseo;
  • Shim, Yeongseok;
  • Youn, Sukhyeong;
  • Lee, Chan Ho;
  • Jeong, Han Beom;
  • Jeong, Hu Young;
  • Chang, Jiwon;
  • Lee, Kyusang;
et al
  • 2021-12-01
  • Science Advances, Vol.7 No.51
  • American Association for the Advancement of Science
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