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Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage propertiesoa mark
  • 2022-01-01
  • Journal of Asian Ceramic Societies, Vol.10 No.3, pp.649-659
  • Taylor and Francis Ltd.
Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor
  • Lim, Han Jin;
  • Choi, Jae Hyoung;
  • Cho, Gihee;
  • Chang, Jaewan;
  • Kim, Younsoo;
  • Jung, Hyung Suk;
  • Shin, Kyoung Sub;
  • Seo, Hyungtak;
  • Jeon, Hyeongtag
  • 2023-10-24
  • Advanced Materials Technologies, Vol.8 No.20
  • John Wiley and Sons Inc
Toward Advanced High-k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition
  • Kim, Se Eun;
  • Sung, Ju Young;
  • Jeon, Jae Deock;
  • Jang, Seo Young;
  • Lee, Hye Min;
  • Moon, Sang Mo;
  • Kang, Jun Goo;
  • Lim, Han Jin;
  • Jung, Hyung Suk;
  • Lee, Sang Woon
  • 2023-10-24
  • Advanced Materials Technologies, Vol.8 No.20
  • John Wiley and Sons Inc
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